IEEE/MTT-S International Microwave Symposium

Sheng Yi Huang, Kun-Ming Chen, Guo-Wei Huang, Chun-Yen Chang, Cheng Chou Hung, Victor Liang

研究成果: Conference contribution同行評審

摘要

An RF power MOSFET was proposed and manufactured in a standard 0.13 mu m CMOS technology. Without adding additional masks, cost and process, the breakdown voltage can be improved by using the N-well and shallow-trench-isolation processes to form a drift n(-) region. The breakdown voltage was 4.3V at gate bias of 1.2V. The cutoff frequency and maximum oscillation frequency were 68GHz and 87GHz, respectively. In addition, the power gain, output power and power-added efficiency were 16.8dB, 15.9dBm and 43.5%, respectively, at 2.4GHz. Good RF linearity also addressed OIP3 of 28.6dBm. The presented RF power transistor is cost effectively and can be applied into the power amplifier integration for RF SoC.
原文English
主出版物標題IEEE/MTT-S International Microwave Symposium
出版狀態Published - 2007

指紋 深入研究「IEEE/MTT-S International Microwave Symposium」主題。共同形成了獨特的指紋。

引用此