Hybrid TiOx/fluoropolymer bi-layer dielectrics for low-voltage complementary inverters

Chao Feng Sung, Dhananjay Kekuda, Li Fen Chu, Fang-Chung Chen, Shiau Shin Cheng, Yuh Zheng Lee, Meng Chyi Wu, Chih Wei Chu*

*Corresponding author for this work

研究成果: Article

5 引文 斯高帕斯(Scopus)

摘要

In this article, low temperature processed, reactively evaporated titanium oxide layers were utilized as gate dielectrics for achieving low voltage driven transistors and complementary inverters. The surface of the gate dielectric was modified by an ultra thin (∼30 nm) fluoropolymer Cytop® layer which partially helped to reduce the leakage in the dielectric films and also enhanced the organic transistor performance. The current investigation demonstrates the ability of these high capacitance bi-layer dielectrics (k ∼ 20). The combined p-type and n-type field-effect transistors show similar saturation mobility ∼0.3 cm2/V s-1 to achieve low voltage driven complementary circuits with output gain of 22. Low temperature processing of these dielectric layers make them easily integrated.

原文English
頁(從 - 到)154-158
頁數5
期刊Organic Electronics
11
發行號1
DOIs
出版狀態Published - 1 一月 2010

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    Sung, C. F., Kekuda, D., Chu, L. F., Chen, F-C., Cheng, S. S., Lee, Y. Z., Wu, M. C., & Chu, C. W. (2010). Hybrid TiOx/fluoropolymer bi-layer dielectrics for low-voltage complementary inverters. Organic Electronics, 11(1), 154-158. https://doi.org/10.1016/j.orgel.2009.09.020