H2 and NH3 plasma passivation on poly-Si TFTs with bottom-sub-gate induced electrical junctions

Cheng Ming Yu, Horng-Chih Lin*, Tiao Yuan Huang, Tan Fu Lei

*Corresponding author for this work

研究成果: Article

6 引文 斯高帕斯(Scopus)

摘要

The effects of NH3 and H2 plasma passivation on the characteristics of poly-Si thin-film transistors (TFTs) with source/drain extensions induced by a bottom sub-gate were studied. Our results show that although significant improvements in device performance can be obtained by either passivation method, the NH3-plasma-treatment appears to be more effective in reducing the off-state leakage, subthreshold swing, and in improving mobility compared to H2 plasma passivation. Furthermore, NH3 plasma treatment is also found to be more effective in reducing the anomalous subthreshold hump phenomenon observed in nonplasma-treated short-channel devices. Detailed analysis suggests that all these improvements can be explained by the more effective passivation of traps distributed in both the front and back sides of the channel by NH3 plasma treatment.

原文English
期刊Journal of the Electrochemical Society
150
發行號12
DOIs
出版狀態Published - 1 十二月 2003

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