Hot-Electron-Induced Traps Studied Through the Random Telegraph Noise

P. Fang*, Kwok K. Hung, Ping K. Ko, Chen-Ming Hu

*Corresponding author for this work

研究成果: Article

43 引文 斯高帕斯(Scopus)

摘要

Random telegraph signal (RTS) measurements have been used to study individual hot-carrier-induced trap in nMOS-FET's. Single-trap filling and emptying can cause 0.1% step noise in channel current. Trap location (3–10 A from interface), time constant (~10 ms), and energy are found to be quite different from those of prestress (process-induced) traps. The type (acceptor or donor) of the traps can also be identified by RTS measurements; both the process and stress-induced traps with energies near the conduction band edge are found to be of the acceptor type for nMOSFET's and trap levels near the valence band edge are found to be of the donor type for pMOSFET's.

原文English
頁(從 - 到)273-275
頁數3
期刊IEEE Electron Device Letters
12
發行號6
DOIs
出版狀態Published - 1 一月 1991

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