Hot-electron-induced electron trapping in 0.13 μm nMOSFETs with ultrathin (EOT=1.6 nm) nitrided gate oxide

Ching Wei Chen*, Chao-Hsin Chien, Tsu Hsiu Perng, Chun Yen Chang

*Corresponding author for this work

研究成果: Article同行評審

摘要

The device degradation caused by the hot-electron-induced electron trapping in the ultrathin (equivalent oxide thickness = 1.6 nm) nitrided gate oxide for the 0.13 μm n-metal oxide semiconductor field effect transistors (n-MOSFETs) has been investigated. We have found that the nitrogen, incorporated in the gate dielectrics by a variety of popular techniques including Si 3 N 4 /SiO 2 (N/O) stack, NO annealing, and plasma nitridation, results in enhanced hot-electron-induced device degradations as compared to the conventional gate oxide counterpart. The enhanced hot-electron degradations are attributed to the electron trap generation in the ultrathin gate dielectric rather than the interface state generation as a result of nitrogen incorporation.

原文English
期刊Electrochemical and Solid-State Letters
8
發行號8
DOIs
出版狀態Published - 14 九月 2005

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