Hot-Carrier Effects in Thin-Film Fully Depleted SOI MOSFET's

Z. J. Ma, H. J. Wann, M. Chan, J. C. King, P. K. Ko, Chen-Ming Hu, Y. C. Cheng

研究成果: Article同行評審

23 引文 斯高帕斯(Scopus)

摘要

Previous conflicting reports concerning fully depleted SOI device hot electron reliability may result from overestimation of channel electric field (Em). Experimental results using SOI MOSFET's with body contacts indicate that Emis just a weak function of thin-film SOI thickness (Tsi) and that Emcan be significantly lower than in a bulk device. with drain junction depth (X j) comparable to SOI's Tsi. The theoretical correlation between SOI MOSFET's gate current and substrate current are experimentally confirmed. This provides a means (IG) of studying Emin SOI device without body contacts. Thin-film SOI MOSFET's have better prospects for meeting breakdown voltage and hot-electron reliability requirements than previously thought.

原文English
頁(從 - 到)218-220
頁數3
期刊IEEE Electron Device Letters
15
發行號6
DOIs
出版狀態Published - 1 一月 1994

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