Hole injection and electron overflow improvement in 365nm light-emitting diodes by band-engineering electron blocking layer

Yi Keng Fu, Yu Hsuan Lu, Rong Xuan, Jenn-Fang Chen, Yan Kuin Su

研究成果: Article

6 引文 斯高帕斯(Scopus)

摘要

The work reports a theoretical and experimental study on the device performance of near ultraviolet light-emitting diodes (LEDs) with specific design on the electron blocking layer (EBL) by employing the band-engineering. The simulation results show the polarization-induced downward band bending is mitigated in the specific EBL design and, hence, the capability of hole transportation increases and the behavior of electron overflow decreases. The experimental results show the LEDs with specific EBL design exhibited a reduction of forward voltage from 4.40 to 4.07 V and a much enhancement of light output power from 30.6 to 51.9mW, compared with conventional LED.

原文English
文章編號08JK05
期刊Japanese Journal of Applied Physics
52
發行號8 PART 2
DOIs
出版狀態Published - 1 八月 2013

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