Highly scaled equivalent oxide thickness of 0.66nm for TiN/HfO2/GaSb MOS capacitors by using plasma-enhanced atomic layer deposition

Ming Li Tsai, Shin Yuan Wang, Chao-Hsin Chien

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

指紋 深入研究「Highly scaled equivalent oxide thickness of 0.66nm for TiN/HfO<sub>2</sub>/GaSb MOS capacitors by using plasma-enhanced atomic layer deposition」主題。共同形成了獨特的指紋。

Engineering & Materials Science

Physics & Astronomy