Highly reliable GaN-based light-emitting diodes formed by p-In0.1Ga0.9N-ITO structure

Kow-Ming Chang*, Jiunn Yi Chu, Chao Chen Cheng

*Corresponding author for this work

研究成果: Article

23 引文 斯高帕斯(Scopus)

摘要

Indium-tin-oxide (ITO) is deposited as a transparent current spreading layer of GaN-based light-emitting diodes (LEDs). To reduce the interfacial Schottky barrier height, a thin p - In0.1Ga0.9N layer is grown as an intermediate between ITO and p-GaN. The contact resistivity around 2.6 × 10-2 Ω · cm2 results in a moderately high forward voltage LED of 3.43 V operated at 20 mA. However, the external quantum efficiency and power efficiency are enhanced by 46% and 36%, respectively, in comparison with the conventional Ni-Au contact LEDs. In the life test, the power degradation of the p-In0.1Ga0.9N-ITO contact samples also exhibits a lower value than that of the conventional ones.

原文English
頁(從 - 到)1807-1809
頁數3
期刊IEEE Photonics Technology Letters
16
發行號8
DOIs
出版狀態Published - 1 八月 2004

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