Highly durable and flexible gallium-based oxide conductive-bridging random access memory

Kai Jhih Gan, Po Tsun Liu*, Ta Chun Chien, Dun Bao Ruan, Simon M. Sze

*Corresponding author for this work

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

The flexible conductive-bridging random access memory (CBRAM) device using a Cu/TiW/Ga2O3/Pt stack is fabricated on polyimide substrate with low thermal budget process. The CBRAM devices exhibit good memory-resistance characteristics, such as good memory window (>105), low operation voltage, high endurance (>1.4 × 102 cycles), and large retention memory window (>105). The temperature coefficient of resistance in the filament confirms that the conduction mechanism observed in the Ga2O3 layer is similar with the phenomenon of electrochemical metallization (ECM). Moreover, the performance of CBRAM device will not be impacted during the flexibility test. Considering the excellent performance of the CBRAM device fabricated by low-temperature process, it may provide a promising potential for the applications of flexible integrated electronic circuits.

原文English
文章編號14141
期刊Scientific reports
9
發行號1
DOIs
出版狀態Published - 1 十二月 2019

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