Higher drive current for SiGe nanowires

Kow-Ming Chang*, Jiun Ming Kuo, Heng Hsin Wu, Wen Hsien Tzeng, Tzu Liu Wu, Wen Chan Chao

*Corresponding author for this work

研究成果: Conference contribution同行評審

9 引文 斯高帕斯(Scopus)

摘要

Nanowire is mainly used in biological sensor because it has the high surface-to-volume ratio. In this study, we have successfully fabricated the Poly-Si and SiGe nanowire with Ge = 7% and 11 % respectively by side-wall spacer technique. In order to normalize the drive current of nanowires, we consider the nanowire as a resistance. The conductance is chose for comparison between the nanowires. The higher conductance achieved of SiGe nanowire with/without nanowire implantation and the SiGe nanowire with higher Ge concentration had higher conductance. However, the disadvantage of lower contact resistance is found in SiGe pad. The 3-amino-propyltriethoxy-silane (APTES) was used to modify the surface, which can detect the charge with different pH. Comparing the conductance change; the SiGe nanowire with higher Ge concentration improved the sensitivity. But the over-higher Ge concentration (40%) did not increase the sensitivity; the reason maybe the higher defect appears at the surface as higher Ge concentration.

原文English
主出版物標題2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
頁面315-319
頁數5
DOIs
出版狀態Published - 1 十月 2008
事件2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 - Shanghai, China
持續時間: 24 三月 200827 三月 2008

出版系列

名字2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

Conference

Conference2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
國家China
城市Shanghai
期間24/03/0827/03/08

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