High-yield thin GaN LED using metal bonding and laser lift-off technology

Ray-Hua Horng*, Ching Ho Chen, Wei Cheng Kao, Dong Sing Wuu

*Corresponding author for this work

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

Gold-indium metal bonding method was used in this study to increase the product yield of vertical light emitting diodes (LEDs) during laser lift-off (LLO) process. The vertical GaN LED transferred onto Si substrate presented good electrical and optical properties due to the existence of high reflective mirror and texture surface. The chip size and dominant wavelength for vertical type LED are 40×40 mil2 and 450 nm. The optimal conditions of temperature and pressure for 2-inch wafer bonding are set of 200°C and 100 kg/inch2, respectively. The products yield of light output power, forward voltage and leakage current are 96 %, 96.4% and 61.2%, respectively. After aging test, the characteristics decay of light output power, forward voltage and leakage current are less than 4%. Summarization of optical and electrical properties, the total yield of these LEDs products is about 60 %.

原文English
主出版物標題Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting
DOIs
出版狀態Published - 1 十二月 2012
事件12th International Conference on Solid State Lighting and 4th International Conference on White LEDs and Solid State Lighting - San Diego, CA, United States
持續時間: 13 八月 201216 八月 2012

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
8484
ISSN(列印)0277-786X

Conference

Conference12th International Conference on Solid State Lighting and 4th International Conference on White LEDs and Solid State Lighting
國家United States
城市San Diego, CA
期間13/08/1216/08/12

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