High-temperature stable IrxSi gates with high work function on HfSiON p-MOSFETs

B. F. Hung*, C. H. Wu, Albert Chin, S. J. Wang, F. Y. Yen, Y. T. Hou, Y. Jin, H. J. Tao, Shih C. Chen, Mong Song Liang

*Corresponding author for this work

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

A novel 1000 °C-stable IrxSi gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In addition, small threshold voltages and good hole mobilities are measured in IrxSi/HfSiON transistors. The 1000 °C thermal stability above pure metal (900 °C only) is due to the inserted 5-nm amorphous Si, which also gives less Fermi-level pinning by the accumulated metallic full silicidation at the interface.

原文English
頁(從 - 到)257-261
頁數5
期刊IEEE Transactions on Electron Devices
54
發行號2
DOIs
出版狀態Published - 1 二月 2007

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