The first voltage comparators implemented with GaAs/(GaAl)As heterojunction bipolar transistors (HBTs) are reported. On a quasistatic basis, the offset voltage was found to be generally below 4 mV, and hysteresis about 1 mV. The HBT comparators could be clocked at frequencies above 2. 5 GHz; they operated over a range of reference voltage of 2 V. The preliminary yield was high. These results indicate that the HBT comparators are suitable for flash analog-to-digital converters with up to 8-bit accuracy, and sampling rates well above 1 GHz.
|出版狀態||Published - 1 十二月 1985|