HIGH-SPEED, HIGH-ACCURACY VOLTAGE COMPARATORS IMPLEMENTED WITH GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR TRANSISTORS.

K. C. Wang; P. M. Asbeck; Mau-Chung Chang; D. L. Miller; F. H. Eisen

HIGH-SPEED, HIGH-ACCURACY VOLTAGE COMPARATORS IMPLEMENTED WITH GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR TRANSISTORS.

K. C. Wang^*, P. M. Asbeck, Mau-Chung Chang, D. L. Miller, F. H. Eisen

^*Corresponding author for this work

電子工程學系

研究成果: Paper › 同行評審

6 引文斯高帕斯（Scopus）

摘要

The first voltage comparators implemented with GaAs/(GaAl)As heterojunction bipolar transistors (HBTs) are reported. On a quasistatic basis, the offset voltage was found to be generally below 4 mV, and hysteresis about 1 mV. The HBT comparators could be clocked at frequencies above 2. 5 GHz; they operated over a range of reference voltage of 2 V. The preliminary yield was high. These results indicate that the HBT comparators are suitable for flash analog-to-digital converters with up to 8-bit accuracy, and sampling rates well above 1 GHz.

原文	English
頁面	99-102
頁數	4
出版狀態	Published - 1 十二月 1985

其它文件與鏈接

Link to publication in Scopus

指紋深入研究「HIGH-SPEED, HIGH-ACCURACY VOLTAGE COMPARATORS IMPLEMENTED WITH GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR TRANSISTORS.」主題。共同形成了獨特的指紋。

引用此

@conference{a2c98fed3f1146e7b2df5c9a0e8d8334,

title = "HIGH-SPEED, HIGH-ACCURACY VOLTAGE COMPARATORS IMPLEMENTED WITH GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR TRANSISTORS.",

abstract = "The first voltage comparators implemented with GaAs/(GaAl)As heterojunction bipolar transistors (HBTs) are reported. On a quasistatic basis, the offset voltage was found to be generally below 4 mV, and hysteresis about 1 mV. The HBT comparators could be clocked at frequencies above 2. 5 GHz; they operated over a range of reference voltage of 2 V. The preliminary yield was high. These results indicate that the HBT comparators are suitable for flash analog-to-digital converters with up to 8-bit accuracy, and sampling rates well above 1 GHz.",

author = "Wang, {K. C.} and Asbeck, {P. M.} and Mau-Chung Chang and Miller, {D. L.} and Eisen, {F. H.}",

year = "1985",

month = dec,

day = "1",

language = "English",

pages = "99--102",

}

TY - CONF

T1 - HIGH-SPEED, HIGH-ACCURACY VOLTAGE COMPARATORS IMPLEMENTED WITH GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR TRANSISTORS.

AU - Wang, K. C.

AU - Asbeck, P. M.

AU - Chang, Mau-Chung

AU - Miller, D. L.

AU - Eisen, F. H.

PY - 1985/12/1

Y1 - 1985/12/1

N2 - The first voltage comparators implemented with GaAs/(GaAl)As heterojunction bipolar transistors (HBTs) are reported. On a quasistatic basis, the offset voltage was found to be generally below 4 mV, and hysteresis about 1 mV. The HBT comparators could be clocked at frequencies above 2. 5 GHz; they operated over a range of reference voltage of 2 V. The preliminary yield was high. These results indicate that the HBT comparators are suitable for flash analog-to-digital converters with up to 8-bit accuracy, and sampling rates well above 1 GHz.

AB - The first voltage comparators implemented with GaAs/(GaAl)As heterojunction bipolar transistors (HBTs) are reported. On a quasistatic basis, the offset voltage was found to be generally below 4 mV, and hysteresis about 1 mV. The HBT comparators could be clocked at frequencies above 2. 5 GHz; they operated over a range of reference voltage of 2 V. The preliminary yield was high. These results indicate that the HBT comparators are suitable for flash analog-to-digital converters with up to 8-bit accuracy, and sampling rates well above 1 GHz.

UR - http://www.scopus.com/inward/record.url?scp=0022325052&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0022325052

SP - 99

EP - 102

ER -