High speed AlGaAs/GaAs complementary HBT technology realized by multiple MBE growth and merged processing

C. W. Farley, R. J. Anderson, R. B. Bernescut, R. W. Grant, Mau-Chung Chang, K. C. Wang, R. B. Nubling, N. H. Sheng

研究成果: Conference contribution

5 引文 斯高帕斯(Scopus)

摘要

A high-performance monolithic Npn/Pnp complementary HBT (heterojunction bipolar transistor) technology involving multiple MBE (molecular beam epitaxy) growths has been developed. Many of the process steps have been merged to simplify concurrent fabrication of Npn and Pnp devices. Pnp devices exhibit fT=20 GHz and fmax=19 GHz. Npn devices show fT=51 GHz and fmax=60 GHz. These cutoff frequencies are 2 to 3 times values previously reported for monolithically integrated Npn and Pnp devices. For the first time, integrated circuits operating at microwave frequencies have been fabricated from both types of devices on the same wafer. Npn-based direct coupled feedback amplifiers (gain blocks) show a gain of 11 dB and a 3-dB bandwidth of 12 GHz. Pnp-based gain blocks show a gain of 8 dB and a 3-dB bandwidth of 6 GHz.

原文English
主出版物標題International Electron Devices Meeting 1991, IEDM 1991
發行者Institute of Electrical and Electronics Engineers Inc.
頁面927-930
頁數4
ISBN(電子)0780302435
DOIs
出版狀態Published - 1 一月 1991
事件International Electron Devices Meeting, IEDM 1991 - Washington, United States
持續時間: 8 十二月 199111 十二月 1991

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
1991-January
ISSN(列印)0163-1918

Conference

ConferenceInternational Electron Devices Meeting, IEDM 1991
國家United States
城市Washington
期間8/12/9111/12/91

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  • 引用此

    Farley, C. W., Anderson, R. J., Bernescut, R. B., Grant, R. W., Chang, M-C., Wang, K. C., Nubling, R. B., & Sheng, N. H. (1991). High speed AlGaAs/GaAs complementary HBT technology realized by multiple MBE growth and merged processing. 於 International Electron Devices Meeting 1991, IEDM 1991 (頁 927-930). [235274] (Technical Digest - International Electron Devices Meeting, IEDM; 卷 1991-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1991.235274