High reflectance contacts to P-type GaN using Ag-La Alloys

Bo Yuan Cheng, I. Chen Chen, Cheng-Huang Kuo, Li Chuan Chang

研究成果: Conference contribution同行評審

摘要

In this study, we have investigated a new Ag-La alloy contact to p-type GaN for producing high reflectance and low contact resistivity ohmic contacts. A low specific contact resistivity of 5.87×10-5 ω cm and high light reflectance of 85% at 460 nm could be obtained from Ag-La alloy contacts after annealed at 350 oC in air ambient. The formation of lanthanum oxide suppresses the Ag oxidation during annealing process and leads to a good ohmic contact with high reflectance. Additionally, compared with pure Ag contacts, the Ag-La alloy contacts show better thermal stability after a long thermal annealing at 300°C in air ambient.

原文English
主出版物標題China Semiconductor Technology International Conference 2012, CSTIC 2012
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1291-1294
頁數4
版本1
ISBN(列印)9781607683186
DOIs
出版狀態Published - 1 十二月 2012
事件China Semiconductor Technology International Conference 2012, CSTIC 2012 - Shanghai, China
持續時間: 18 三月 201219 三月 2012

出版系列

名字ECS Transactions
號碼1
44
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

ConferenceChina Semiconductor Technology International Conference 2012, CSTIC 2012
國家China
城市Shanghai
期間18/03/1219/03/12

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