High-quality planar light emitting diode formed by induced two-dimensional electron and hole gases

Van Truong Dai, Sheng-Di Lin*, Shih Wei Lin, Yi Shan Lee, Liang Chen Li, Chien Ping Lee

*Corresponding author for this work

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

A high-quality planar two-dimensional p-i-n light emitting diode in an entirely undoped GaAs/AlGaAs quantum well has been fabricated by using conventional lithography process. With twin gate design, twodimensional electron and hold gases can be placed closely on demand. The electroluminescence of the device exhibit high stability and clear transition peaks so it is promising for applications on electrically-driven single photon sources.

原文English
頁(從 - 到)3811-3817
頁數7
期刊Optics Express
22
發行號4
DOIs
出版狀態Published - 24 二月 2014

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