High-quality native-oxide-free ultra-thin oxide grown by in-situ HF-vapour treatment

C. L. Chen*, Tien-Sheng Chao, C. S. Lai, T. Y. Huang

*Corresponding author for this work

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

A high-quality native-oxide-free ultra-thin gate oxide (2.4-3.2nm) realised by a clustered vertical furnace with in-situ HF-vapour treatment is presented. The gate oxide integrity was significantly improved by using the in-situ HF-vapour treatment prior to gate oxidation.

原文English
頁(從 - 到)981-983
頁數3
期刊Electronics Letters
36
發行號11
DOIs
出版狀態Published - 25 五月 2000

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