High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells

A. R. Kovsh*, A. E. Zhukov, N. A. Maleev, S. S. Mikhrin, A. V. Vasil'ev, Yu M. Shernyakov, D. A. Livshits, M. V. Maximov, D. S. Sizov, N. V. Kryzhanovskaya, N. A. Pikhtin, V. A. Kapitonov, I. S. Tarasov, N. N. Ledentsov, V. M. Ustinov, J. S. Wang, L. Wei, Kuo-Jui Lin, J. Y. Chi

*Corresponding author for this work

研究成果: Conference article同行評審

摘要

High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells (QW) were presented. High gain submonolayer quantum dots allowed to use broad waveguide design typical for high power laser based on QWs. The results demonstrated the potential of submonolayer technique to form active region of high power laser.

原文English
頁(從 - 到)353-356
頁數4
期刊Proceedings of SPIE - The International Society for Optical Engineering
5023
DOIs
出版狀態Published - 15 九月 2003
事件10th International Symposium on Nanostructures: Physics and Technology - St. Petersburg, Russian Federation
持續時間: 17 六月 200221 六月 2002

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