High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells (QW) were presented. High gain submonolayer quantum dots allowed to use broad waveguide design typical for high power laser based on QWs. The results demonstrated the potential of submonolayer technique to form active region of high power laser.
|頁（從 - 到）||353-356|
|期刊||Proceedings of SPIE - The International Society for Optical Engineering|
|出版狀態||Published - 15 九月 2003|
|事件||10th International Symposium on Nanostructures: Physics and Technology - St. Petersburg, Russian Federation|
持續時間: 17 六月 2002 → 21 六月 2002