High-power diode-pumped Nd: GdVO4/KGW Raman laser at 578 nm

Yung-Fu Chen*, Hsin-Yuan Huang, C. C. Lee, J. Q. Hsiao, Chia-Han Tsou, H. C. Liang

*Corresponding author for this work

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

A diode-pumped neodymium-doped gadolinium vanadate (Nd:GdVO4) laser is developed as a compact efficient yellow light at 578 nm by means of intracavity stimulated Raman scattering (SRS) in a potassium gadolinium tungstate (KGW) crystal and the second-harmonic generation in a lithium triborate crystal. The SRS process with a shift of 768 cm(-1) is achieved by setting the polarization of the fundamental wave along the N-g axis of the KGW crystal. The self-Raman effect arising from the Nd:GdVO4 crystal is systematically explored by employing two kinds of coating specification for the output coupler. With a specific coating on the output coupler to suppress the self-Ram an effect, the maximum output power at 578 nm can reach 3.1 W at a pump power of 32 W. Moreover, two different lengths for the Nd:GdVO4 crystal are individually used to verify the influence of the self-Raman effect on the lasing efficiency. (C) 2020 Optical Society of America

原文English
頁(從 - 到)5562-5565
頁數4
期刊Optics Letters
45
發行號19
DOIs
出版狀態Published - 1 十月 2020

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