High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer

Yu Chiang Chao, Chin Ho Chung, Hsiao-Wen Zan*, Hsin-Fei Meng, Ming Che Ku

*Corresponding author for this work

研究成果: Article

8 引文 斯高帕斯(Scopus)

摘要

A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was investigated. When MoO 3/Al was used as the top emitter and indium tin oxide was used as the bottom collector, the operating voltage of 0.6 V, the on/off current ratio of 4 × 10 4, and the switching swing of 105 mV/decade were achieved. A low-power-consumption inverter was also demonstrated.

原文English
文章編號233308
期刊Applied Physics Letters
99
發行號23
DOIs
出版狀態Published - 5 十二月 2011

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