High-performance SrTiO 3 MIM capacitors for analog applications

K. C. Chiang*, Ching Chien Huang, G. L. Chen, Wen Jauh Chen, H. L. Kao, Yung Hsien Wu, Albert Chin, Sean P. McAlister

*Corresponding author for this work

研究成果: Article同行評審

88 引文 斯高帕斯(Scopus)

摘要

TaN/SrTiO 3 /TaN capacitors with a capacitance density of 28-35 fF/μm 2 have been developed by using a high-κ (κ = 147-169) SrTiO 3 dielectric containing nanometer-sized microcrystals (3-10 nm). A small capacitance effective thickness was achieved by reducing the interfacial TaON using N + treatment on the lower TaN electrode during post-deposition annealing. The small (92 ppm/V 2 ) voltage coefficient of the capacitance and the 3 × 10 -8 A/cm 2 leakage current at 2 V exceed the International Technology Roadmap for Semiconductors' requirements for analog capacitors at year 2018.

原文English
頁(從 - 到)2312-2318
頁數7
期刊IEEE Transactions on Electron Devices
53
發行號9
DOIs
出版狀態Published - 1 九月 2006

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