High performance Si/SiGe heterostructure MOSFETs for low power analog circuit applications

Pei-Wen Li*, W. M. Liao, C. C. Shih, T. S. Kuo, L. S. Lai, Y. T. Tseng, M. J. Tsai

*Corresponding author for this work

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

We have demonstrated a high performance Si1-xGex pMOSFET technology for low power circuit applications. The incorporation of 30% Ge in the strained Si1-xGex channel provides a drive current enhancement by a factor of 2.7 over its counterpart Si bulk pMOSFETs and manifests a marked advantage of two decade in exponential operating region allowing both lower power consumption and a wider dynamic range for low power circuit applications. The measured low frequency noise in Si1-xGex pMOSFET's is found to be significantly lower than in Si devices. The experimental results promise the potential of SiGe/Si heterostructure MOSFETs in radio-frequency low power circuit applications.

原文English
頁(從 - 到)1095-1098
頁數4
期刊Solid-State Electronics
47
發行號6
DOIs
出版狀態Published - 1 六月 2003

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