High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET with Low Thermal Budget Process

Chung Chun Hsu, Yi He Tsai, Che Wei Chen, Jyun Han Li, Yu Hsien Lin, Yao Jen Lee, Guang Li Luo, Chao-Hsin Chien*

*Corresponding author for this work

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

We present a high-performance Si/Ge/Si p-channel metal-oxide-semiconductor field-effect transistor (pMOSFET) with a NiSiGe Schottky junction source/drain (S/D) formed through microwave-activated annealing. A Schottky contact S/D is preferable, because the lower process temperature is beneficial for eliminating Ge diffusion. The fabricated NiSiGe Schottky junction exhibited a high effective barrier height (ΦBn) of 0.69 eV for electrons, resulting in a high junction current ratio of more than 105 at the applied voltage of |Va|=1 V. Our quantum-well pMOSFET exhibited a high ION/IOFF ratio of ∼ 107(IS) and a moderate subthreshold swing of 166 mV/decade.

原文English
文章編號7331593
頁(從 - 到)8-11
頁數4
期刊IEEE Electron Device Letters
37
發行號1
DOIs
出版狀態Published - 1 一月 2016

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