摘要
High-performance low-temperature poly-Si thin-film transistors (TFTs) using high-k (HfO2) gate dielectric is demonstrated for the first time. Because of the high gate capacitance density and thin equivalent-oxide thickness contributed by the high-k gate dielectric, excellent device performance can be achieved including high driving current, low subthreshold swing, low threshold voltage, and high ON/OFF current ratio. It should be noted that the ON-state current of high-k gate-dielectric TFTs is almost five times higher than that of SiO2 gate-dielectric TFTs. Moreover, superior threshold-voltage (Vth) rolloff property is also demonstrated. All of these results suggest that high-k gate dielectric is a good choice for high-performance TFTs.
原文 | English |
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頁(從 - 到) | 360-363 |
頁數 | 4 |
期刊 | IEEE Electron Device Letters |
卷 | 27 |
發行號 | 5 |
DOIs | |
出版狀態 | Published - 1 五月 2006 |