High-performance poly-Si TFTs with fully Ni-self-aligned silicided S/D and gate structure

Po Yi Kuo*, Tien-Sheng Chao, Ren Jie Wang, Tan Fu Lei

*Corresponding author for this work

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this letter, fully Ni self-aligned silicided (fully Ni-salicided) source/drain (S/D) and gate polycrystalline silicon thin-film transistors (FSA-TFTs) have been successfully fabricated on a 40-nm-thick channel layer. Experimental results show that the FSA-TFTs give increased ON/OFF current ratio, improved subthreshold characteristics, less threshold voltage rolloff, and larger field-effect mobility compared with conventional TFTs. The FSA-TFTs exhibit small S/D and gate parasitic resistance and effectively suppress the floating-body effect and parasitic bipolar junction transistor action. The characteristics of the FSA-TFTs are suitable for high-performance driving TFTs with good output characteristics and large breakdown voltage.

原文English
頁(從 - 到)258-261
頁數4
期刊IEEE Electron Device Letters
27
發行號4
DOIs
出版狀態Published - 1 四月 2006

指紋 深入研究「High-performance poly-Si TFTs with fully Ni-self-aligned silicided S/D and gate structure」主題。共同形成了獨特的指紋。

引用此