High performance multi-bit nonvolatile HfO2 nanocrystal memory using spinodal phase separation of hafnium silicate

Yu Hsien Lin*, Chao-Hsin Chien, Ching Tzung Lin, Ching Wei Chen, Chun Yen Chang, Tan Fu Lei

*Corresponding author for this work

研究成果: Conference article同行評審

17 引文 斯高帕斯(Scopus)

摘要

In this paper, we exploit a novel technique for preparing high density HfO2 nanocrystals with an average size < 10nm using spinodal phase separation of Hf-silicate thin film by 900°C rapid thermal annealing for nonvolatile memories. The density can be as high as 0.9-1.9times;10 12cm-2. Owing to the fact that HfO2 nanocrystals are well embedded inside SiO2 matrix and their sufficiently deep energy level, we, for the first time, have demonstrated superior characteristics of the nanocrystal memory in terms of considerably large memory window, high speed program/erase (1μs/0.1ms), long retention time greater than 108s for 10% charge loss, excellent endurance after 106 P/E cycles, negligible read/write disturbances and multi-bit operation.

原文English
頁(從 - 到)1080-1082
頁數3
期刊Technical Digest - International Electron Devices Meeting, IEDM
DOIs
出版狀態Published - 1 十二月 2004
事件IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
持續時間: 13 十二月 200415 十二月 2004

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