High performance Ir/TiPrO/tan MIM capacitors for analog ICs Application

C. C. Huang, C. H. Cheng, Albert Chin, C. P. Chou

研究成果: Conference contribution同行評審

摘要

In this paper, we demonstrate high quality material TiPrO and high density TixPr1-xO (x∼0.67) metal-insulator-metal (MIM) capacitors using high work function (∼5.3 eV) Ir top electrode. Very low leakage current of 7 10-9 A/cm2 at -1 V and high 16 fF/μm 2 capacitance density are achieved for 400 °C anneal TiPrO, which also meets the ITRS goals (at year 2018) of 10 fF/μm2 density and J/(C.V)<7 fA/(pF.V). Furthermore, the improved high 20 fF/μm2 capacitance density TiPrO MIM is obtained at higher annealing temperature, where low leakage current 1.2 10-7 A/cm2 is measured at -1 V. These good performances indicate TiPrO MIM is suitable for analog/RF ICs Applications.

原文English
主出版物標題ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6
頁面341-352
頁數12
版本5
DOIs
出版狀態Published - 1 十二月 2008
事件Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting - Honolulu, HI, United States
持續時間: 13 十月 200815 十月 2008

出版系列

名字ECS Transactions
號碼5
16
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

ConferencePhysics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting
國家United States
城市Honolulu, HI
期間13/10/0815/10/08

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