High performance InGaZnO thin film transistor with InGaZnO source and drain electrodes

Hung Chi Wu*, Chao-Hsin Chien

*Corresponding author for this work

研究成果: Article同行評審

41 引文 斯高帕斯(Scopus)

摘要

This work demonstrates In-Ga-Zn-O (IGZO) as source and drain electrodes in IGZO-thin film transistors (TFTs). The fabricated TFT depicts excellent electrical properties; its mobility is 18.02 (cm2/V s), threshold voltage (Vth) is 0.3 (V), on/off ratio is 1.63 × 108 and subthreshold swing (S.S.) is 239 (mV/decade). We find using rapid thermal annealing treatment can convert IGZO into an effective conductor, and the transparency of IGZO remained almost unchanged. We also find sufficient thermal budget is needed for getting stable transfer curve and output characteristic; otherwise, current fluctuation in on-state can be easily observed. With IGZO electrodes, fully transparent IGZO-TFTs can be thus realized on a glass substrate.

原文English
文章編號062103
期刊Applied Physics Letters
102
發行號6
DOIs
出版狀態Published - 11 二月 2013

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