This work demonstrates high-performance Ge p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs)  with ternary-phase NiGePt alloy Schottky source/drain (S/D) by low-temperature microwave-activated annealing (MWA) . Process flow of Shcottky junctions is shown in Fig. 1. Interestingly, the formed NiGePt alloy is nearly single crystalline. We found the formation of ternary-phase alloy NiGePt seems very helpful in suppressing the off-leakage of junction, as shown in Fig. 2. The fabricated NiGePt/N-Ge Schottky junction depicted an impressive effective barrier height (Phi(Bn)) of similar to 0.59 eV for electrons, leading to a high junction current ratio of >10(5) at the applied voltage of vertical bar V-a vertical bar = 1 V. Slight increase with increasing deposited Pt thickness can be explained by the improved series resistance, as shown in Fig. 2. The lower process temperature of MWA as compared to the conventional thermal annealing is beneficial for eliminating surface roughness, reducing alloy agglomeration of Schottky contact S/D. As a consequence, we employed the advantages of low-temperature MWA to fabricate the Schottky S/D PMOSFETs. With forming gas annealing, the Ge PMOSFET (L = 4 mu m) showed a very high output current of 33.5 mu A/mu m at V-GS-V-T = -2.4 and V-DS = -2 V. Our ternary Schottky PMOSFET exhibited a high I-ON/I-OFF ratios of similar to 3.7 X 10(3)(I-D) and similar to 1.3 X 10(5)(I-S), and a moderate subthreshold swing of 126 mV/dec, as shown in Figs. 3.
|主出版物標題||2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)|
|編輯||YL Jiang, TA Tang, R Huang|
|出版狀態||Published - 十月 2016|
|事件||13th IEEE International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) - Hangzhou|
持續時間: 25 十月 2016 → 28 十月 2016
|Conference||13th IEEE International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)|
|期間||25/10/16 → 28/10/16|