The characteristics of different confined structures of AlGaInP/GaInP laser diodes grown by low-pressure multi-wafer metal-organic chemical vapor deposition have been discussed in this work. The constraint effect on the light and carriers in confining layers has been analyzed as well. To enhance the efficiency, the relatively low refractive index of AlInP was adopted as the cladding layer, in which the doping level of p-cladding layer was over 1×1018 cm-3. Meanwhile, the GRINSCH structures were applied as confining layers to achieve optimum constraints of light and carriers. The threshold current was measured as 10.6 mA from the laser diodes emitting at λ = 652 nm with resonant cavity of 3.5 μm×300 μm and 16.8 mA from the laser diodes emitting at λ = 639 nm with resonant cavity of 3.5 μm×300 μm.
|頁（從 - 到）||214-219|
|期刊||Proceedings of SPIE - The International Society for Optical Engineering|
|出版狀態||Published - 1 一月 2000|
|事件||Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging and Reliability of Semiconductor Laseer V - San Jsoe, CA, USA|
持續時間: 25 一月 2000 → 26 一月 2000