We report a novel charge-trapping (CT) flash memory device with highly scaled equivalent-Si 3N 4-thickness (ENT) trapping layer <4 nm. This device shows a large 10-year extrapolated retention window of 3.1 V at 125°C and excellent endurance of 10 6 cycles, under the fast 100 μs and low ±16 V program/erase. These excellent memory device performances and ultra-thin ENT trapping thickness are the enable technology to continuously downscale the flash memory.
|出版狀態||Published - 1 十二月 2011|
|事件||2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011 - Shanghai, China|
持續時間: 7 十一月 2011 → 9 十一月 2011
|Conference||2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011|
|期間||7/11/11 → 9/11/11|