High-performance and low-temperature-compatible p-channel polycrystalline-silicon TFTs using hafnium-silicate gate delectric

Ming Jui Yang*, Chao-Hsin Chien, Yi Hsien Lu, Guang Li Luo, Su Ching Chiu, Chun Che Lou, Tiao Yuan Huang

*Corresponding author for this work

研究成果: Article同行評審

17 引文 斯高帕斯(Scopus)

摘要

In this letter, high-performance p-channel polycrystalline-silicon thin-film transistors (TFTs) using hafnium-silicate (HfSiO x) gate dielectric are demonstrated with low-temperature processing. Because of the higher gate-capacitance density, TFTs with HfSiO x gate dielectric exhibit excellent device performance in terms of higher I ON/I OFF current ratio, lower subthreshold swing, and lower threshold voltage (V th albeit with slightly higher off-state current. More importantly, the mobility of TFTs with HfSiO x gate dielectric is 1.7 times that of TFTs with conventional deposited-SiO 2 gate dielectric.

原文English
頁(從 - 到)902-904
頁數3
期刊IEEE Electron Device Letters
28
發行號10
DOIs
出版狀態Published - 1 十月 2007

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