High performance amorphous in-W-Zn-O thin film transistor with ultra-thin active channel for low voltage operation

Po-Tsun Liu, Po Yi Kuo, Shan Ming Hsu

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

Amorphous indium tungsten zinc oxide (a-IWZO) ultra-thin film TFTs (UTFTs) have been successfully fabricated and demonstrated in this work. Tungsten oxide (WCb)-doped indium zinc oxide was developed because WO3 doping can form stable semiconducting films with various carrier mobilities and carrier concentration. The novel IWZO UTFTs with high-K HfC2 gate insulator exhibit superior potential for the power-saving applications of flat panel displays (FPDs), flexible electronics, and large scale integration (LSI) technologies owing to its outstanding characteristics of low threshold voltage ~-0.072 V, high field-effect mobility (p.re) ~ 23.8 cnvW-s, excellent subthreshold swing ~ 72.6 mV/dec, low voltage operation (low power consumption), high electrical reliability, and small hysteresis.

原文English
主出版物標題ECS Transactions
編輯Yue Kuo
發行者Electrochemical Society Inc.
頁面91-93
頁數3
86
版本11
ISBN(電子)9781607685395
DOIs
出版狀態Published - 1 一月 2018
事件Symposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
持續時間: 30 九月 20184 十月 2018

出版系列

名字ECS Transactions
號碼11
86
ISSN(列印)1938-6737
ISSN(電子)1938-5862

Conference

ConferenceSymposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting
國家Mexico
城市Cancun
期間30/09/184/10/18

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