High-performance AlGaInP/GaAs light-emitting diodes with a carbon-doped GaP/indium-tin oxide contact layer

Shun Cheng Hsu*, Dong Sing Wuu, Xinhe Zheng, Ray-Hua Horng, Juh Yuh Su

*Corresponding author for this work

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

An alternative heavily carbon-doped GaP (GaP:C) contact layer is demonstrated to form a good ohmic contact to electron-beam-evaporation indium-tin oxide (ITO) spreading layer on the AlGaInP light-emitting diode (LED) with a GaAs absorbing substrate. The LEDs with GaP:C/ITO contact layer provide a substantial improvement in light output power over conventional structures (without GaP:C/ITO). The AlGaInP LEDs with GaP:C/ITO structures exhibited a higher external quantum efficiency (3.24%) and larger light output power (5.9 mW) under a dc operation of 160mA than those of 2.01% and 1.93 mW at 120mA for the conventional structures, showing an earlier saturation behavior of current-power characteristics. These positive results are tentatively attributed to the introduction of the GaP:C/ITO current-spreading structures in the LEDs.

原文English
頁(從 - 到)7023-7025
頁數3
期刊Japanese Journal of Applied Physics
47
發行號9 PART 1
DOIs
出版狀態Published - 12 九月 2008

指紋 深入研究「High-performance AlGaInP/GaAs light-emitting diodes with a carbon-doped GaP/indium-tin oxide contact layer」主題。共同形成了獨特的指紋。

引用此