In this paper, high performance ALD HfO 2-Al 2O 3 laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF/μm 2 from 10 kHz to 20 GHz, low leakage current of 7.45×10 -9 A/cm 2@2V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO 2-Al 2O 3 laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.
|頁（從 - 到）||379-382|
|期刊||Technical Digest - International Electron Devices Meeting|
|出版狀態||Published - 1 十二月 2003|
|事件||IEEE International Electron Devices Meeting - Washington, DC, United States|
持續時間: 8 十二月 2003 → 10 十二月 2003