High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications

Hang Hu*, Shi Jin Ding, H. F. Lim, Chunxiang Zhu, M. F. Li, S. J. Kim, X. F. Yu, J. H. Chen, Y. F. Yong, Byung Jin Cho, D. S.H. Chan, Subhash C. Rustagi, M. B. Yu, C. H. Tung, Anyan Du, Doan My, P. D. Foo, Albert Chin, Dim Lee Kwong

*Corresponding author for this work

研究成果: Conference article同行評審

34 引文 斯高帕斯(Scopus)

摘要

In this paper, high performance ALD HfO 2-Al 2O 3 laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF/μm 2 from 10 kHz to 20 GHz, low leakage current of 7.45×10 -9 A/cm 2@2V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO 2-Al 2O 3 laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.

原文English
頁(從 - 到)379-382
頁數4
期刊Technical Digest - International Electron Devices Meeting
出版狀態Published - 1 十二月 2003
事件IEEE International Electron Devices Meeting - Washington, DC, United States
持續時間: 8 十二月 200310 十二月 2003

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