High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response

Yen Chun Fu*, William Hsu, Yen Ting Chen, Huang Siang Lan, Cheng Han Lee, Hung Chih Chang, Hou Yun Lee, Guang Li Luo, Chao-Hsin Chien, C. W. Liu, Chen-Ming Hu, Fu Liang Yang

*Corresponding author for this work

研究成果: Conference contribution同行評審

8 引文 斯高帕斯(Scopus)

摘要

The record high peak mobility of ∼1050 cm2/V-s on (001) Ge substrate is demonstrated in NFET. High-quality Ge/GeO2 interface is ensured by rapid thermal oxidation (RTO) and remote ozone plasma treatment. The best achieved subthreshold swing is 150mV/dec and the on/off ratio is 2×104. The low defective n+/p junction produced a record high on/off ratio of 2×105, an ideality factor of 1.05 and strong electroluminescence. For the first time, it is reported that the uniaxial 〈110〉 tensile strain (0.08%) on 〈110〉 channel direction gives the best mobility enhancement (12%) among the different strain configurations, consistent with theoretical calculation.

原文English
主出版物標題2010 IEEE International Electron Devices Meeting, IEDM 2010
DOIs
出版狀態Published - 1 十二月 2010
事件2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
持續時間: 6 十二月 20108 十二月 2010

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
ISSN(列印)0163-1918

Conference

Conference2010 IEEE International Electron Devices Meeting, IEDM 2010
國家United States
城市San Francisco, CA
期間6/12/108/12/10

指紋 深入研究「High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response」主題。共同形成了獨特的指紋。

引用此