High field-emission stability of offset-thin-film transistor-controlled Al-doped zinc oxide nanowires

Po Yu Yang*, Jyh Liang Wang, Wei Chih Tsai, Shui Jinn Wang, Jia Chuan Lin, I. Che Lee, Chia Tsung Chang, Huang-Chung Cheng

*Corresponding author for this work

研究成果: Article

5 引文 斯高帕斯(Scopus)

摘要

Aluminum-doped zinc oxide (AZO) nanowire (NW) arrays incorporating an offset thin-film transistor (offset-TFT) have been proposed to achieve high field-emission (FE) stability. The AZO NW field emission arrays (FEAs) were hydrothermally grown at a low temperature of 85 °C. The uncontrolled AZO NW FEAs demonstrated superior FE characteristics (i.e., turn-on field of ̃2:17 V/μm and threshold field of ̃3:43 V/μm) compared with those of the conventional CNT FEAs grown at a temperature below 600 °C. However, uncontrolled AZO NW FEAs show a larger current fluctuation of 15.6%. Therefore, the offset-TFTs were used to control the AZO NW FEAs. Consequently, the fluctuation of AZO NW FEAs could be significantly reduced to less than 2%. This novel field emission device exhibits good emission stability, low-voltage controllability, lowtemperature processing, and structural simplicity, making it promising for applications in flat panel displays.

原文English
文章編號04DN07
期刊Japanese journal of applied physics
50
發行號4 PART 2
DOIs
出版狀態Published - 1 四月 2011

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    Yang, P. Y., Wang, J. L., Tsai, W. C., Wang, S. J., Lin, J. C., Lee, I. C., Chang, C. T., & Cheng, H-C. (2011). High field-emission stability of offset-thin-film transistor-controlled Al-doped zinc oxide nanowires. Japanese journal of applied physics, 50(4 PART 2), [04DN07]. https://doi.org/10.1143/JJAP.50.04DN07