High efficiency InGaP/GaAs solar cell with sub-wavelength structure on AlInP window layer

Min An Tsai*, Peichen Yu, C. H. Chiu, Hao-Chung Kuo, Tien-chang Lu

*Corresponding author for this work

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this study, InGaP/GaAs solar cells fabricated by a Sub-wavelength surface texture process are presented. The characteristics of the InGaP/GaAs solar cells with and without the Sub-wavelength surface texture are studied. The conversion efficiency measured under one-sun air mass 1.5 global illumination at room temperature can also be improved from 10.8%. The simulated result of the Sub-wavelength structure by the RCWA was demonstrated that absorption of the solar cell will increase by the Sub-wavelength surface texture.

原文English
主出版物標題INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
頁面781-782
頁數2
DOIs
出版狀態Published - 5 一月 2010
事件2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
持續時間: 3 一月 20108 一月 2010

出版系列

名字INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Conference

Conference2010 3rd International Nanoelectronics Conference, INEC 2010
國家China
城市Hongkong
期間3/01/108/01/10

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