Radiofrequency (RF) metal-insulator-metal (MIM) capacitors based on high-permittivity AlTaOx dielectrics were presented. A high capacitance density of 10 fF/νm2 and small capacitance reduction of 5% was achieved with the RF capacitors. The AlTaOx MIM capacitor technology was found to be suitable for high speed precision circuits operating in the RF regime.
|頁（從 - 到）||507-510|
|期刊||IEEE MTT-S International Microwave Symposium Digest|
|出版狀態||Published - 18 八月 2003|
|事件||2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States|
持續時間: 8 六月 2003 → 13 六月 2003