High density RF MIM capacitors using high-κ AlTaOx dielectrics

C. H. Huang*, M. Y. Yang, Albert Chin, Chunxiang Zhu, M. F. Li, Dim Lee Kwong

*Corresponding author for this work

研究成果: Conference article同行評審

25 引文 斯高帕斯(Scopus)

摘要

Radiofrequency (RF) metal-insulator-metal (MIM) capacitors based on high-permittivity AlTaOx dielectrics were presented. A high capacitance density of 10 fF/νm2 and small capacitance reduction of 5% was achieved with the RF capacitors. The AlTaOx MIM capacitor technology was found to be suitable for high speed precision circuits operating in the RF regime.

原文English
頁(從 - 到)507-510
頁數4
期刊IEEE MTT-S International Microwave Symposium Digest
1
DOIs
出版狀態Published - 18 八月 2003
事件2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States
持續時間: 8 六月 200313 六月 2003

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