High-density MIM capacitors with HfO 2 dielectrics

Tsu Hsiu Perng*, Chao-Hsin Chien, Ching Wei Chen, Peer Lehnen, Chun Yen Chang

*Corresponding author for this work

研究成果: Article同行評審

33 引文 斯高帕斯(Scopus)

摘要

Metal-insulator-metal (MIM) capacitors with high-k HfO 2 dielectrics were fabricated and investigated. Experimental results show low leakage current densities of ∼5 × 10 -9 A/cm 2 and high capacitance density of ∼3.4 fF/μm 2 at 100 kHz in the MIM capacitors. The temperature coefficient and frequency dispersion effect for these MIM capacitors were very small. Different metal electrodes like tantalum, aluminum and copper were also investigated and compared. Finally, the mechanism of electrical transport was extracted for the HfO 2 MIM capacitors to be Poole-Frenkel-type conduction mechanism.

原文English
頁(從 - 到)345-349
頁數5
期刊Thin Solid Films
469-470
發行號SPEC. ISS.
DOIs
出版狀態Published - 22 十二月 2004

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