High-density MIM capacitors using Al 2O 3 and AlTiO x dielectrics

S. B. Chen*, C. H. Lai, Albert Chin, J. C. Hsieh, J. Liu

*Corresponding author for this work

研究成果: Article同行評審

152 引文 斯高帕斯(Scopus)

摘要

We have investigated the electrical characteristics of Al 2O 3 and AlTiO x MIM capacitors from IF (100 KHz) to RF (20 GHz) frequency range. Record high capacitance density of 0.5 and 1.0 μF/cm 2 are obtained for Al 2O 3 and AlTiO x MIM capacitors, respectively, and the fabrication process is compatible to existing VLSI backend integration. However, the AlTiO x MIM capacitor has very large capacitance reduction as increasing frequencies. In contrast, good device integrity has been obtained for Al 2O 3 MIM capacitor as evidenced from the small frequency dependence, low leakage current, good reliability, small temperature coefficient, and low loss tangent.

原文English
頁(從 - 到)185-187
頁數3
期刊IEEE Electron Device Letters
23
發行號4
DOIs
出版狀態Published - 1 四月 2002

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