High-density (4.4F 2 ) NAND flash technology using Super-Shallow Channel Profile (SSCP) engineering

F. Arai*, N. Arai, S. Satoh, T. Yaegashi, E. Kamiya, Y. Matsunaga, Y. Takeuchi, H. Kamata, A. Shimizu, N. Ohtani, N. Kai, S. Takahashi, W. Moriyama, K. Kugimiya, S. Miyazaki, T. Hirose, H. Meguro, K. Hatakeyama, K. Shimizu, Shirota Riichiro

*Corresponding author for this work

研究成果: Conference article同行評審

13 引文 斯高帕斯(Scopus)

摘要

This paper describes a novel high-density 4.4F 2 (F: feature size) NAND flash memory with the cell size of O.074um 2 for O.13um design rule. To minimize the cell size, two key technologies are introduced as follows. (1) The Super-Shallow Channel Profile (SSCP) engineering and (2) a novel layout of the NAND string that consists of 32 cells. The NAND cells fabricated by the above technologies have demonstrated good cell characteristics. This 4.4F 2 NAND flash technology is highly advantageous for low cost flash memories of 4Gbit and beyond for mass storage applications.

原文English
頁(從 - 到)775-778
頁數4
期刊Technical Digest - International Electron Devices Meeting
DOIs
出版狀態Published - 1 十二月 2000
事件2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States
持續時間: 10 十二月 200013 十二月 2000

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