This paper describes a novel high-density 4.4F 2 (F: feature size) NAND flash memory with the cell size of O.074um 2 for O.13um design rule. To minimize the cell size, two key technologies are introduced as follows. (1) The Super-Shallow Channel Profile (SSCP) engineering and (2) a novel layout of the NAND string that consists of 32 cells. The NAND cells fabricated by the above technologies have demonstrated good cell characteristics. This 4.4F 2 NAND flash technology is highly advantageous for low cost flash memories of 4Gbit and beyond for mass storage applications.
|頁（從 - 到）||775-778|
|期刊||Technical Digest - International Electron Devices Meeting|
|出版狀態||Published - 1 十二月 2000|
|事件||2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States|
持續時間: 10 十二月 2000 → 13 十二月 2000