High-current-drive dual-gate a-IGZO TFT with nanometer dotlike doping

Chun Hung Liao, Chang Hung Li, Hsiao-Wen Zan, Hsin-Fei Meng, Chuang Chuang Tsai

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this letter, we use a dual-gate (DG) structure together with nanometer dotlike doping (NDD) in active channel to produce a-IGZO thin-film transistors with very high current drive. With DG operation, the output current increases from 0.14 mA of the conventional device to 0.76 mA of the NDD device. The enhanced lateral field and improved carrier accumulation in DG operation may explain the significantly enlarged drive current. Particularly, simulated electron distribution reveals that high carrier concentration is induced under NDD regions in DG operation. The device without NDD, however, does not exhibit improved drive current in DG operation.

原文English
文章編號6587475
頁(從 - 到)1274-1276
頁數3
期刊IEEE Electron Device Letters
34
發行號10
DOIs
出版狀態Published - 2 九月 2013

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