High charge storage characteristics of CeO2 nanocrystals for novolatile memory applications

Shao Ming Yang*, Jiun Jia Huango, Chao-Hsin Chien, Pei Jer Taeng, Lurng Shehng Lee, Ming Jinn Tsai, Tan Fu Lei

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

This paper presents the formation of CeO2 nanocrystals on SiO2 tunneling layer and its annealing effect to the nonvolatile memory device. The characteristics including the program/erase behaviors, data retention, and endurance of Silicon-Oxide-Nitride-Oxide-Silicon type memories embedded with cerium oxide (CeO2) nanocrystals were studieded to demonstrate its advantages as a nonvolatile memory device.

原文English
主出版物標題2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
頁面48-49
頁數2
DOIs
出版狀態Published - 14 八月 2008
事件2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan
持續時間: 21 四月 200823 四月 2008

出版系列

名字International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
國家Taiwan
城市Hsinchu
期間21/04/0823/04/08

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