Healing of surface states and point defects in single-crystalline β-Ga 2O 3 epilayer

P. Ravadgar*, Ray-Hua Horng, T. Y. Wang

*Corresponding author for this work

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

Single-crystalline β-Ga 2O 3 epilayer on (0001) sapphire was grown at low temperature and low pressure by MOCVD. The as-grown β-Ga 2O 3 epilayer was annealed at 800°C in atmosphere. Crystal structure and quality of the epilayer remained the same after annealing. Influence of surface states and point defects of β-Ga 2O 3 epilayers before and after annealing are studied using room-temperature Photoluminescence (PL) and I-V characteristics. The significant difference in PL property of β-Ga 2O 3 and big difference (∼5 orders in magnitude) in dark current before and after annealing is attributed to the healing of the surface states and point defects. Gallium oxide is known for its high density of oxygen vacancies. Annealing single-crystalline β-Ga 2O 3 epilayer at high temperature makes the healing possible, probably due to oxygen adsorption. A significant healing of surface states and point defects in single-crystalline β-Ga 2O 3 indicates its high potential in fabrication of optoelectronic devices.

原文English
主出版物標題Wide-Bandgap Semiconductor Materials and Devices 13
頁面79-84
頁數6
版本7
DOIs
出版狀態Published - 19 十一月 2012
事件13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting - Seattle, WA, United States
持續時間: 6 五月 201210 五月 2012

出版系列

名字ECS Transactions
號碼7
45
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

Conference13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting
國家United States
城市Seattle, WA
期間6/05/1210/05/12

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