HBT technology and applications, today and tomorrow

F. Lee*, G. Kinoshita, Mau-Chung Chang

*Corresponding author for this work

研究成果: Article

摘要

This paper briefly reviews the status of GaAs Heterostructure Bipolar Technology (HBT) material, process and device developments. Representative device performance being achieved today is reported. System applications of digital and mixed signal circuits are described. Finally, further development of the HBT technology necessary for commercial applications is discussed.

原文English
頁(從 - 到)27-32
頁數6
期刊Alta Frequenza Rivista Di Elettronica
6
發行號5
DOIs
出版狀態Published - 1 九月 1994

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