Growth of vertically aligned ZnO nanorod arrays as anti-reflection layer in silicon solar cell

J. Y. Chen, Kien-Wen Sun

研究成果: Conference contribution同行評審

摘要

We have investigated solution-grown ZnO nanorod arrays as the anti-reflection(AR) layer for Si solar cells. The nanorod morphology, controlled through synthetic chemistry, has a great effect on the AR layer performance. We demonstrate that the light harvest efficiency of the solar cells can be greatly improved from 10.4% to 12.8% by using the vertical aligned ZnO nanorod arrays as the AR layer on poly-Si solar cells.

原文English
主出版物標題INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
頁面1078-1079
頁數2
DOIs
出版狀態Published - 5 五月 2010
事件2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
持續時間: 3 一月 20108 一月 2010

出版系列

名字INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Conference

Conference2010 3rd International Nanoelectronics Conference, INEC 2010
國家China
城市Hongkong
期間3/01/108/01/10

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