Growth of thin niobium crystals by the strain-anneal method

S. R. Stock*, Haydn Chen, H. K. Birnbaum

*Corresponding author for this work

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

A technique suitable for the growth of thin, niobium single crystals is described. Crystals with thicknesses ranging between 25 μ m and 7 mm were grown. These crystals are highly perfect and require no preparation, other than a light chemical polish, prior to being studied directly with X-ray topography. Laboratory double crystal and synchrotron white beam topography showed that dislocation densities were less than 104 cm-2 in carefully handled crystals. The particular advantage of this method is the minimal specimen preparation which is required.

原文English
頁(從 - 到)419-424
頁數6
期刊Journal of Crystal Growth
84
發行號3
DOIs
出版狀態Published - 1 一月 1987

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