Growth of strain InAs-channel quantum well FETs on si substrate using SiGe buffer

Edward Yi Chang, Shih Hsuan Tang, Yueh Chin Lin, Yen Chang Hsieh

研究成果: Conference contribution同行評審

摘要

The growth of the A1GaSb/InAs quantum well field effect transistor(QWFET) epitaxial structure on the Si substrate has been investigated. Buffer layers consisted of UHV/chemical vapor deposited grown Ge/GeSi and molecular beam epitaxy-grown A1GaSb/A1Sb/GaAs were used to accommodate the strain induced by the large lattice mismatch between the A1GaSb/InAs QWFET structure and the Si substrate. A very high room-temperature electron mobility of 27300 cm 2 /V s was achieved. Strained QWFET was also grown on the GaAs substrate, it is found that the strained QWFET grown on the Si substrate has higher electron mobility due to high strain induced in this structure.

原文English
主出版物標題ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4
主出版物子標題New Materials, Processes, and Equipment
頁面243-252
頁數10
版本1
DOIs
出版狀態Published - 13 十一月 2008
事件Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4 - Phoenix, AZ, United States
持續時間: 18 五月 200822 五月 2008

出版系列

名字ECS Transactions
號碼1
13
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

ConferenceAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4
國家United States
城市Phoenix, AZ
期間18/05/0822/05/08

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